www.DataSheet4U.com SAMWIN Features N-Channel .
SAMWIN
SW7N60 - N-Channel MOSFET
www.DataSheet4U.com SAMWIN Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ℃) : 600 V : 1 ohm : 7.0 A : .
SEMIPOWER
SW7N60R - MOSFET
SAMWIN SW7N60R N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max1.25Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/.
SEMIPOWER
SW7N60D - N-Channel MOSFET
SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 High ruggedness Low RDS(ON) (Typ .
SEMIPOWER
SW7N60H - MOSFET
SAMWIN SW7N60H N-channel TO-220F MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 1.32Ω)@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved .
SEMIPOWER
SW7N60K - MOSFET
SAMWIN SW7N60K N-channel TO-220F/I-PAK MOSFET Features TO-220F TO-251 ■ High ruggedness ■ RDS(ON) (Max 0.6Ω)@VGS=10V ■ Gate Charge (Typical 21nC.
Fairchild Semiconductor
SSW7N60B - 600V N-Channel MOSFET
SSW7N60B / SSI7N60B November 2001 SSW7N60B / SSI7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .
SAMWIN
SW7N60A - N-channel MOSFET
SAMWIN SW7N60A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.3 Ω)@VGS=10V ■ Gate Charge (Typ 38nC) ■ Improved dv/dt Capability ■ 100%.
