Semi-Shielded Datasheet | Specifications & PDF Download

*Ro*AH*HESACCL-OQOM2G0EP0NLICFAORNMETEP, L&IANT AUTOMOTIVE GRADE Features ■ Semi-shielded construction ■ Inductance range: 0.5 to 330 µH ■ Rated cur

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*Ro*AH*HESACCL-OQOM2G0EP0NLICFAORNMETEP, L&IANT AUTOMOTIVE GRADE Features n Semi-shielded construction n High operating temperature n Inductance ran

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*RoHS COMPLIANT 150 Features ■ Semi-shielded construction ■ Inductance range: 1 to 220 µH ■ Rated current up to 3 A ■ RoHS compliant* and halogen fr

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*RoHS COMPLIANT 2R2 Features ■ Semi-shielded construction ■ Inductance range: 1.5 to 47 µH ■ Rated current up to 3.6 A ■ RoHS compliant* and halogen

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*RoHS COMPLIANT Features ■ Semi-shielded construction ■ Component height: 2 mm max. ■ Inductance range: 1 to 33 µH ■ High rated current - up to 3.6 A

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4R7 Features n Semi-shielded construction n Miniature size n Low profile - 1.8 mm max. n Inductance range: 0.82 to 220 µH n High rated current - u

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FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET June 2013 FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET 40 V, 80 A, 2.1 mΩ Features

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*RoHS COMPLIANT Features ■ Semi-shielded construction ■ Component height: 2 mm max. ■ Inductance range: 1 to 33 µH ■ High rated current - up to 3.6 A

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FDMS86181 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86181 December 2015 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 124 A, 4.2 mΩ Fea

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Features n Semi-shielded construction n Miniature size n Component height 1.5 mm n Inductance range: 1 to 100 µH n Rated current up to 2.35 A n RoH

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*Ro*AH*HESACCL-OQOM2G0EP0NLICFAORNMETEP, L&IANT Features n Semi-shielded construction n Inductance range: 1 to 470 µH n Rated current up to 8 A n A

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FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET May 2013 FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 109 mΩ Features „ Shi

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Features n Semi-shielded construction n Miniature size n Low profile, 1 mm n Flat wire n Low DCR n RoHS compliant* and halogen free** Applicati

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FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET May 2013 FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 1.2 A, 350 mΩ Feat

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*RoHS COMPLIANT Features ■ Semi-shielded construction ■ Component height: 2 mm max. ■ Inductance range: 1 to 33 µH ■ High rated current - up to 3.6 A

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AEC-**Q*2H0RA0oL HOCSGO ECMNO PFLMIRPAELNIE TA&NT, Features n Semi-shielded construction n Inductance range: 1 to 47 µH n Rated current up to 4.1

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AEC-**Q*2H0RA0oL HOCSGO ECMNO PFLMIRPAELNIE TA&NT, 2R2 Features n Semi-shielded construction n Inductance range: 0.6 to 100 µH n Rated current up

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*RoHS COMPLIANT Features ■ Semi-shielded construction ■ Component height: 2 mm max. ■ Inductance range: 1 to 33 µH ■ High rated current - up to 3.6 A

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*RoHS COMPLIANT Features ■ Semi-shielded construction ■ Component height: 2 mm max. ■ Inductance range: 1 to 33 µH ■ High rated current - up to 3.6 A

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*RoHS COMPLIANT Features ■ Semi-shielded construction ■ Component height: 2 mm max. ■ Inductance range: 1 to 33 µH ■ High rated current - up to 3.6 A

(6 views)