FDMS86181 N-Channel Shielded Gate PowerTrench MOSFET

Fairchild Semiconductor

Description

FDMS86181 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86181 December 2015 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 124 A, 4.2 mΩ Fea.
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMS86181
Manufacturer: Fairchild Semiconductor
File Size: 359.73 KB
Datasheet: FDMS86181-FairchildSemiconductor.pdf
Description: N-Channel Shielded Gate PowerTrench MOSFET

Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
* Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
* ADD
* 50% lower Qrr than other MOSFET suppliers
* Lowers switching noise/EMI
* MSL1 robust package design

Applications

* Primary DC-DC MOSFET
* Synchronous Rectifier in DC-DC and AC-DC
* Motor Drive
* Solar Top Pin 1 Bottom Pin 1 S S S G Power 56 D D D D S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Dra

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FDMS86181 N-Channel Shielded Gate PowerTrench MOSFET Fairchild Semiconductor

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