FDMS86181 - N-Channel Shielded Gate PowerTrench MOSFET
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Applicati
FDMS86181 Features
* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
* Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
* ADD
* 50% lower Qrr than other MOSFET suppliers
* Lowers switching noise/EMI
* MSL1 robust package design
