FDMS86181

N-Channel Shielded Gate PowerTrench MOSFET

Fairchild Semiconductor

FDMS86181 Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A

* Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A

* ADD

* 50% lower Qrr than other MOSFET suppliers

* Lowers switching noise/EMI

* MSL1 robust package design

FDMS86181 General Description

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. Applicati.

FDMS86181 Datasheet (359.73 KB)

FDMS86181 Datasheet Preview — Preview of FDMS86181 PDF

Datasheet Details

Part number:

FDMS86181

Manufacturer:

Fairchild Semiconductor

File Size:

359.73 KB

Description:

N-channel shielded gate powertrench mosfet.
FDMS86181 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86181 December 2015 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 124 A, 4.2 mΩ Fea.

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FDMS86181 N-Channel Shielded Gate PowerTrench MOSFET Fairchild Semiconductor

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FDMS86181 Features

FDMS86181 General Description

Datasheet Details

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