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FDC8602 Datasheet - Fairchild Semiconductor

FDC8602 Dual N-Channel Shielded Gate PowerTrench MOSFET

This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process * Shielded Gate MOSFET Technology * Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A * Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A * High performance trench technolog.

FDC8602-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDC8602

Manufacturer:

Fairchild Semiconductor

File Size:

203.83 KB

Description:

Dual n-channel shielded gate powertrench mosfet.

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FDC8602 FDC8602 Dual N-Channel Shielded Gate PowerTrench MOSFET Fairchild Semiconductor

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