FDC8602 - Dual N-Channel Shielded Gate PowerTrench MOSFET
This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process * Shielded Gate MOSFET Technology * Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A * Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A * High performance trench technolog
