* General Description This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process
* Shielded Gate MOSFET Technology
* Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A
* Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A
* High performa
FDC8602
Fairchild Semiconductor
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Dual n-channel shielded gate powertrench mosfet.
FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET
May 2013
FDC8602
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 1.2 A, 350 mΩ Feat.
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