FDC8602 Dual N-Channel Shielded Gate PowerTrench MOSFET

Fairchild Semiconductor

Description

FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET May 2013 FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 1.2 A, 350 mΩ Feat.
This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process. Shielded Gate MOSFET Technology.

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Datasheet Specifications

Part number: FDC8602
Manufacturer: Fairchild Semiconductor
File Size: 203.83 KB
Datasheet: FDC8602-FairchildSemiconductor.pdf
Description: Dual N-Channel Shielded Gate PowerTrench MOSFET

Applications

* Load Switch
* Synchronous Rectifier D2 S1 D1 G2 S2 Pin 1 SuperSOT G1 TM -6 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche

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FDC8602 Dual N-Channel Shielded Gate PowerTrench MOSFET Fairchild Semiconductor

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