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FDC855N

Single N-Channel PowerTrench MOSFET

FDC855N Features

* Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A

* Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A

* SuperSOTTM -6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick).

* RoHS Compliant tm ® General Description This N-Channel Logic Level MOSFET

FDC855N General Description

This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Semiconductor’s advanced PowerTrench® process, this device possesses minimized on-state resistance to optimize the power consumption. They are ideal for applications where.

FDC855N Datasheet (251.80 KB)

Preview of FDC855N PDF

Datasheet Details

Part number:

FDC855N

Manufacturer:

Fairchild Semiconductor

File Size:

251.80 KB

Description:

Single n-channel powertrench mosfet.

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TAGS

FDC855N Single N-Channel PowerTrench MOSFET Fairchild Semiconductor

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