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FDC8878 N-Channel MOSFET

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Description

FDC8878 N-Channel PowerTrench® MOSFET FDC8878 N-Channel PowerTrench® MOSFET 30 V, 8.0 A, 16 mΩ April 2015 .
Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8. Max rDS(on) = 18 mΩ at VGS = 4. High performance trench te.

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Datasheet Specifications

Part number
FDC8878
Manufacturer
Fairchild Semiconductor
File Size
310.87 KB
Datasheet
FDC8878-FairchildSemiconductor.pdf
Description
N-Channel MOSFET

Applications

* Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous

FDC8878 Distributors

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDC8878-like datasheet