FDC8878 - N-Channel MOSFET
* Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A * Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A * High performance trench technology for extremely low rDS(on) * Fast switching speed * RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semicond
