FDC8602 - Dual N-Channel MOSFET

ON Semiconductor

FDC8602 Datasheet Preview — Preview of FDC8602 PDF

Datasheet Details

Part number	FDC8602
Manufacturer	ON Semiconductor ↗
File Size	358.91 KB
Description	Dual N-Channel MOSFET
Datasheet	FDC8602-ONSemiconductor.pdf

FDC8602 Product details

Description

This N Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized for RDS(on), switching performance and ruggedness.

Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 350 mW at VGS = 10 V, ID = 1.2 A.
Max RDS(on) = 575 mW at VGS = 6 V, ID = 0.9 A.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 21, 2023 |