FDC8602 Datasheet - ON Semiconductor

FDC8602 Dual N-Channel MOSFET

FDC8602 Features

* Shielded Gate MOSFET Technology

* Max RDS(on) = 350 mW at VGS = 10 V, ID = 1.2 A

* Max RDS(on) = 575 mW at VGS = 6 V, ID = 0.9 A

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability in a Widely Used Surf

Datasheet Details

FDC8602

358.91 KB

Dual n-channel mosfet.

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FDC8602 FDC8602 Dual N-Channel MOSFET ON Semiconductor

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