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FDC8602

Dual N-Channel MOSFET

FDC8602 Features

* Shielded Gate MOSFET Technology

* Max RDS(on) = 350 mW at VGS = 10 V, ID = 1.2 A

* Max RDS(on) = 575 mW at VGS = 6 V, ID = 0.9 A

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability in a Widely Used Surf

FDC8602 Datasheet (358.91 KB)

Preview of FDC8602 PDF

Datasheet Details

Part number:

FDC8602

Manufacturer:

ON Semiconductor ↗

File Size:

358.91 KB

Description:

Dual n-channel mosfet.

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TAGS

FDC8602 Dual N-Channel MOSFET ON Semiconductor

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