FDC8602 - Dual N-Channel MOSFET
FDC8602 Features
* Shielded Gate MOSFET Technology
* Max RDS(on) = 350 mW at VGS = 10 V, ID = 1.2 A
* Max RDS(on) = 575 mW at VGS = 6 V, ID = 0.9 A
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability in a Widely Used Surf
