FDC8602 Dual N-Channel MOSFET

ON Semiconductor

Description

MOSFET * Dual, N-Channel, Shielded Gate, POWERTRENCH) 100 V, 1.2 A, 350 mW FDC8602 General .
This N. Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDC8602
Manufacturer: ON Semiconductor ↗
File Size: 358.91 KB
Datasheet: FDC8602-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 350 mW at VGS = 10 V, ID = 1.2 A
* Max RDS(on) = 575 mW at VGS = 6 V, ID = 0.9 A
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability in a Widely Used Surf

Applications

* Load Switch
* Synchronous Rectifier MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current: Continuous (Note 1a) Pulsed 100 V ±20 V A 1.2 5 EAS Single Pulse Avalanche

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FDC8602 Dual N-Channel MOSFET ON Semiconductor

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