Datasheet4U Logo Datasheet4U.com

FDC86244 - N-Channel MOSFET

Description

This N

advanced POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 144 mW at VGS = 10 V, ID = 2.3 A.
  • Max rDS(on) = 188 mW at VGS = 6 V, ID = 1.9 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halogen Free/BFR Free and is RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FDC86244

Datasheet Details

Part number FDC86244
Manufacturer ON Semiconductor
File Size 531.98 KB
Description N-Channel MOSFET
Datasheet download datasheet FDC86244 Datasheet
Additional preview pages of the FDC86244 datasheet.

📁 Similar Datasheet

  • FDC86244 - N-Channel Power Trench MOSFET (Fairchild Semiconductor)
  • FDC8601 - N-Channel Shielded Gate PowerTrench MOSFET (Fairchild Semiconductor)
  • FDC8601 - N-Channel 100V MOSFET (VBsemi)
  • FDC8602 - Dual N-Channel Shielded Gate PowerTrench MOSFET (Fairchild Semiconductor)
  • FDC855N - Single N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
  • FDC8878 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDC8884 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDC8886 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDC-xx - EMC Filters - Single-Phase Filters - FD/FDC/FDV IEC Connector Filter (Premo)
  • FDC05 - 5 WATTS OUTPUT POWER (Snaptec)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 2.3 A, 144 mW FDC86244 General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 144 mW at VGS = 10 V, ID = 2.3 A • Max rDS(on) = 188 mW at VGS = 6 V, ID = 1.9 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • Fast Switching Speed • 100% UIL Tested • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Applications • Load Switch • Synchronous Rectifier • Primary Switch www.onsemi.
Published: |