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FDC86244 N-Channel MOSFET

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Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 150 V, 2.3 A, 144 mW FDC86244 General .
This N. Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 144 mW at VGS = 10 V, ID = 2.3 A
* Max rDS(on) = 188 mW at VGS = 6 V, ID = 1.9 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used Surf

Applications

* Load Switch
* Synchronous Rectifier
* Primary Switch www. onsemi. com TSOT23 6
* Lead CASE 419BL MARKING DIAGRAM &E&Y &.244&G 1 XXX = Specific Device Code &E = Space Designator &Y = Year of Production &. = Pin One Identifier G = Pb
* Free Package PINOUT S4 D5

FDC86244 Distributors

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDC86244-like datasheet