FDC8884 N-Channel MOSFET

Fairchild Semiconductor

Description

FDC8884 N-Channel Power Trench® MOSFET April 2015 FDC8884 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching perform.

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Datasheet Specifications

Part number: FDC8884
Manufacturer: Fairchild Semiconductor
File Size: 319.39 KB
Datasheet: FDC8884-FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
* Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A
* High performance trench technology for extremely low rDS(on)
* Fast switching speed

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FDC8884 N-Channel MOSFET Fairchild Semiconductor

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