FDC8884

N-Channel MOSFET

Fairchild Semiconductor

FDC8884 Features

* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A

* Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A

* High performance trench technology for extremely low rDS(on)

* Fast switching speed

* RoHS Compliant General Description This N-Channel MOSFET is produced using

FDC8884 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance. Application

* Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise.

FDC8884 Datasheet (319.39 KB)

FDC8884 Datasheet Preview — Preview of FDC8884 PDF

Datasheet Details

Part number:

FDC8884

Manufacturer:

Fairchild Semiconductor

File Size:

319.39 KB

Description:

N-channel mosfet.

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FDC8884 N-Channel MOSFET Fairchild Semiconductor

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FDC8884 Features

FDC8884 General Description

Datasheet Details

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Description:

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