FDC8886 N-Channel MOSFET

Fairchild Semiconductor

Description

FDC8886 N-Channel Power Trench® MOSFET April 2015 FDC8886 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ .
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6. Max rDS(on) = 36 mΩ at VGS = 4. High performance trench te.

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Datasheet Specifications

Part number: FDC8886
Manufacturer: Fairchild Semiconductor
File Size: 320.94 KB
Datasheet: FDC8886-FairchildSemiconductor.pdf
Description: N-Channel MOSFET

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FDC8886 N-Channel MOSFET Fairchild Semiconductor

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