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FDC8886

N-Channel MOSFET

FDC8886 Features

* General Description

* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A

* Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A

* High performance trench technology for extremely low rDS(on)

* Fast switching speed

* RoHS Compliant This N-Channel MOSFET is produced usi

FDC8886 General Description



* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A

* Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A

* High performance trench technology for extremely low rDS(on)

* Fast switching speed

* RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semicond.

FDC8886 Datasheet (320.94 KB)

Preview of FDC8886 PDF

Datasheet Details

Part number:

FDC8886

Manufacturer:

Fairchild Semiconductor

File Size:

320.94 KB

Description:

N-channel mosfet.

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TAGS

FDC8886 N-Channel MOSFET Fairchild Semiconductor

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