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FDC8886 Datasheet - Fairchild Semiconductor

FDC8886 N-Channel MOSFET

* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A * Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A * High performance trench technology for extremely low rDS(on) * Fast switching speed * RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semicond.

FDC8886-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDC8886

Manufacturer:

Fairchild Semiconductor

File Size:

320.94 KB

Description:

N-channel mosfet.

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FDC8886 FDC8886 N-Channel MOSFET Fairchild Semiconductor