FDC8886 - N-Channel MOSFET
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A * Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A * High performance trench technology for extremely low rDS(on) * Fast switching speed * RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semicond
