FDC8601 Datasheet - ON Semiconductor

FDC8601 N-Channel MOSFET

FDC8601 Features

* Shielded Gate MOSFET Technology

* Max RDS(on) = 109 mW at VGS = 10 V, ID = 2.7 A

* Max RDS(on) = 176 mW at VGS = 6 V, ID = 2.1 A

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability in a Widely Used Surf

Datasheet Details

FDC8601

385.00 KB

N-channel mosfet.

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FDC8601 FDC8601 N-Channel MOSFET ON Semiconductor

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