FDC8601 - N-Channel MOSFET
FDC8601 Features
* Shielded Gate MOSFET Technology
* Max RDS(on) = 109 mW at VGS = 10 V, ID = 2.7 A
* Max RDS(on) = 176 mW at VGS = 6 V, ID = 2.1 A
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability in a Widely Used Surf
