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FDC8601 N-Channel MOSFET

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Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 100 V, 2.7 A, 109 mW FDC8601 General .
This N. Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 109 mW at VGS = 10 V, ID = 2.7 A
* Max RDS(on) = 176 mW at VGS = 6 V, ID = 2.1 A
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability in a Widely Used Surf

Applications

* Load Switch
* Synchronous Rectifier
* Primary Switch MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current: Continuous (Note 1a) Pulsed 100 V ±20 V A 2.7 12 EA

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDC8601-like datasheet