FDC8601 - N-Channel MOSFET

ON Semiconductor

FDC8601 Datasheet Preview — Preview of FDC8601 PDF

Datasheet Details

Part number	FDC8601
Manufacturer	ON Semiconductor ↗
File Size	385.00 KB
Description	N-Channel MOSFET
Datasheet	FDC8601-ONSemiconductor.pdf

FDC8601 Product details

Description

This N Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized for RDS(on), switching performance and ruggedness.

Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 109 mW at VGS = 10 V, ID = 2.7 A.
Max RDS(on) = 176 mW at VGS = 6 V, ID = 2.1 A.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 21, 2023 |