Si2307 Datasheet | Specifications & PDF Download

Si2307DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.080 @ VGS = –10 V 0.140 @ VGS = –4.5 V ID (A) –3 –2

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SI2307 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m Ω Features Advance

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Si2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req

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MCC R Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz

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www.vishay.com Si2307CDS Vishay Siliconix P-Channel 30 V (D-S) MOSFET SOT-23 (TO-236) D 3 FEATURES • TrenchFET® power MOSFET • Material categoriza

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