TAXI Datasheet | Specifications & PDF Download

Features Low capacitance. (C = 3.5pF max) Short reverse recovery time. (t rr = 8.0ns max) High reliability with glass seal. Mechanical Data Ca

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FRED Module Fast Recovery Epitaxial Diode MEA/MEK/MEE 300-06DA VRRM = 600 V IFAVM = 304 A trr = 250 ns Part number MEA 300-06DA MEK 300-06DA MEE 300

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R I772 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Descriptio

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MCL352 Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance

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Silicon Epitaxial Planar Diode LS4150 Features D Electrical data identical with the device 1N4150 D Quadro Melf package Applications High speed swit

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Features  Low forward voltage  Fast reverse recovery time MMBD914 Silicon Epitaxial Planar Switching Diode SOT-23 Equivalent Circuit 3.Cathode Ma

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Fast Recovery Epitaxial Diode (FRED) DSEI120-06A IFAV = 126 A VRRM = 600 V trr = 35 ns Part number DSEI120-06A TO-247AD 3 1/4 4 (TAB) Features

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FRED Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-12A 2 1 3 4 DSEI2x101-12A VRRM I FAV t rr = 1

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LL914 LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. LL-34 Cathode band Type Peak reverse voltage Max. aver. rectifi

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LL914-LL4454 SILICON EPITAXIAL PLANAR DIODES Features · Switching Speed C B Mechanical Data · Case: SDO-80/LL34 · Terminals: Solderable per MIL-STD

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1SS270A Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0567-0400 Rev.4.00 Sep 29, 2008 Features • Low capacitance. (C = 3.0 pF max) • S

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R I882 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descriptio

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No. : 1/3 HSA733SP PNP EPITAXIAL PL

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Fast Recovery Epitaxial Diode (FRED) Single Diode Part number MEO 550-02DA 3 MEO 550-02DA VRRM = 200 V IFAVM = 582 A trr = 150 ns Backside: isolated

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PN2222 PN2222 General Purpose Transistor NPN Epitaxial Silicon Transistor 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25

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LL914 LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. LL-34 Cathode band Type Peak reverse voltage Max. aver. rectifi

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LL914 LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. LL-34 Cathode band Type Peak reverse voltage Max. aver. rectifi

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LL914-LL4454 SILICON EPITAXIAL PLANAR DIODES Features · Switching Speed C B Mechanical Data · Case: SDO-80/LL34 · Terminals: Solderable per MIL-STD

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1SS270A SILICON EPITAXIAL PLANAR DIODE Features Low capacitance Short reverse recovery time High reliability Mechanical Data Case: DO-35, gla

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No. : 1/3 HSA733SP PNP EPITAXIAL PL

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