TP120 Datasheet | Specifications & PDF Download

JMTP120C03D Description JMT N And P-Channel Enhancement Mode MOSFET Features  N-Channel: 30V, 10A RDS(ON) < 13mΩ @ VGS = 10V RDS(ON) < 20mΩ @ VGS

(30 views)

N-CHANNEL 100V - 0.009 Ω - 120A D²PAK/TO-220 STripFET™ II POWER MOSFET TYPE STB120NF10 STP120NF10 s s s s STB120NF10 STP120NF10 VDSS 100 V 100 V RD

(15 views)

TP120H058WS 1200V GaN FET in TO-247 (source tab) Preliminary Description The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off d

(15 views)

www.DataSheet4U.com STB120NH03L - STI120NH03L STP120NH03L N-channel 30V - 0.005Ω - 60A - TO-220 / D2PAK / I2PAK STripFET™ Power MOSFET for DC-DC conv

(14 views)

www.DataSheet4U.com STP120NF04 N-channel 40V - 0.0047Ω - 120A TO-220 STripFET™ II MOSFET General features Type STP120NF04 ■ ■ VDSS 40V RDS(on) <0.0

(13 views)

www.vishay.com VS-GB75TP120U Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 75 A INT-A-PAK FEATURES • High short circuit

(13 views)

www.vishay.com VS-GB100TP120U Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A INT-A-PAK FEATURES • 10 μs short circu

(12 views)

STP120N4F6 N-channel 40 V, 3.8 mΩ , 80 A, TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features Order code STP120N4F6 VDSS 40 V RDS(on) max. 4.3 mΩ

(12 views)

w w a D . w S a t e e h U 4 t m o .c w w .D t a w w S a .D e h t e 4 t e U 4 . o c U m o .c a t a e h S w

(10 views)

TTD120N03AT, TTP120N03AT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES  Trench Power MOSFET Technology  Low RDS(ON) 

(10 views)

STB120N10F4, STP120N10F4 N-channel 100 V, 8 mΩ typ., 120 A, STripFET™ DeepGATE™ 2 Power MOSFETs in D PAK and TO-220 packages Datasheet − production da

(9 views)

www.vishay.com VS-GB75TP120N Vishay Semiconductors Molding Type Module IGBT 2-in 1-Package, 1200 V, 75 A INT-A-PAK PRODUCT SUMMARY VCES IC at TC =

(8 views)

isc N-Channel MOSFET Transistor IXTP120N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.1mΩ@VGS=10V ·Fully characterized avalanche vo

(8 views)

TrenchT2TM Power MOSFET IXTA120N04T2 IXTP120N04T2 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 40V 120A 6.1mΩ TO-263 Symbo

(7 views)

www.vishay.com VS-GB100TP120N Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A INT-A-PAK FEATURES • High short circui

(7 views)

TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA120N075T2 IXTP120N075T2 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg

(7 views)

isc N-Channel MOSFET Transistor IXTP120N075T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.7mΩ@VGS=10V ·Fully characterized avalanche v

(7 views)

www.vishay.com VS-GB50TP120N Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A INT-A-PAK FEATURES • High short circuit

(6 views)

[[[ZMWLE]GSQ :7+8 84 2 :MWLE]7IQMGSRHYGXSVW 1SPHMRK8]TI1SHYPI-+&8  MR 4EGOEKI  :  % -28%4%/ *)%896)7 d 0S[:')SR XVIRGL

(6 views)

CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTP1207A3 Spec. No. : C307A3 Issued Date : 2015.04.30 Revised Date : Page N

(5 views)