STP120N4F6

N-channel Power MOSFET

STMicroelectronics

STP120N4F6 Features

* Order code STP120N4F6 VDSS 40 V RDS(on) max. 4.3 mΩ 1. Current limited by package

* Standard threshold drive

* 100% avalanche tested ID 80 A (1) Application

* Switching applications

* Automotive Description This device is a 40 V N-channel STripFET™ VI Power MOSFET based on th

STP120N4F6 General Description

This device is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!"OR ' Table 1. Device summa.

STP120N4F6 Datasheet (720.31 KB)