STP120N4F6 - N-channel Power MOSFET
This device is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
3 2 1 TO-220 Figure 1.
Internal schematic diagram $ 4!" OR ' Table 1.
Device summa
