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STP12NB30 Datasheet - ST Microelectronics

STP12NB30 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

STP12NB30_STMicroelectronics.pdf

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Datasheet Details

Part number:

STP12NB30

Manufacturer:

STMicroelectronics ↗

File Size:

56.52 KB

Description:

N - channel enhancement mode powermesh mosfet.

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STP12NB30 STP12NB30 CHANNEL ENHANCEMENT MODE PowerMESH MOSFET ST Microelectronics

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