STP12NB30 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

ST Microelectronics

Description

STP12NB30 STP12NB30FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P s s s s s V DSS 300 V 300 V R DS(on.
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.

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Datasheet Specifications

Part number: STP12NB30
Manufacturer: STMicroelectronics ↗
File Size: 56.52 KB
Datasheet: STP12NB30_STMicroelectronics.pdf
Description: N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

Applications

* s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY(UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM (
* ) P t ot dv/dt( 1 ) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drai

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STP12NB30 CHANNEL ENHANCEMENT MODE PowerMESH MOSFET ST Microelectronics

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