STP12NB30 Datasheet - ST Microelectronics

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STP12NB30 General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

STP12NB30 Datasheet (56.52 KB)

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STP12NB30

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STMicroelectronics ↗

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N - channel enhancement mode powermesh mosfet.
STP12NB30 STP12NB30FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P s s s s s V DSS 300 V 300 V R DS(on.

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STP12NB30 General Description

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