STP12NK30Z Datasheet - ST Microelectronics

STP12NK30Z N-CHANNEL 300V - 0.36ohm - 9A - TO-220 Zener-Protected SuperMESH Power MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

STP12NK30Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STP12NK30Z_STMicroelectronics.pdf