Datasheet Specifications
- Part number
- STP12NK30Z
- Manufacturer
- STMicroelectronics ↗
- File Size
- 283.40 KB
- Datasheet
- STP12NK30Z_STMicroelectronics.pdf
- Description
- N-CHANNEL 300V - 0.36ohm - 9A - TO-220 Zener-Protected SuperMESH Power MOSFET
Description
STP12NK30Z N-CHANNEL 300V - 0.36Ω - 9A - TO-220 Zener-Protected SuperMESH™Power MOSFET TYPE STP12NK30Z s s s s s s s VDSS 300 V RDS(on) < 0.4 Ω ID .
Features
* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltaApplications
* Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS LIGHTING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s HIGH CURRENT, HIGH SPEED SWITCHING s ORDERING INFORMATION SALES TYPE STP12NK30Z MARKINGSTP12NK30Z Distributors
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