STP12NK30Z - N-CHANNEL 300V - 0.36ohm - 9A - TO-220 Zener-Protected SuperMESH Power MOSFET

ST Microelectronics

Datasheet Details

Part number: STP12NK30Z
Manufacturer: STMicroelectronics ↗
File Size: 283.40 KB
Datasheet: STP12NK30Z_STMicroelectronics.pdf
Description: N-CHANNEL 300V - 0.36ohm - 9A - TO-220 Zener-Protected SuperMESH Power MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/8 STP12NK30Z.

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