STP12N50M2 Datasheet - STMicroelectronics

STP12N50M2 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore su.

STP12N50M2 Features

* Order code STP12N50M2 VDS 500 V RDS(on) max ID 0.38 Ω 10 A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zener-protected Figure 1. Internal schematic diagram , TAB Applicat

STP12N50M2-STMicroelectronics.pdf