STP12N50M2 N-channel Power MOSFET

STMicroelectronics

Description

STP12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220 package Datasheet - preliminary data 7$% 72 .
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

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Datasheet Specifications

Part number: STP12N50M2
Manufacturer: STMicroelectronics ↗
File Size: 306.14 KB
Datasheet: STP12N50M2-STMicroelectronics.pdf
Description: N-channel Power MOSFET

Features

* Order code STP12N50M2 VDS 500 V RDS(on) max ID 0.38 Ω 10 A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate input resistance
* 100% avalanche tested
* Zener-protected Figure 1. Internal schematic diagram , TAB Applicat

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STP12N50M2 N-channel Power MOSFET STMicroelectronics

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