* Order code STP12N50M2 VDS 500 V RDS(on) max ID 0.38 Ω 10 A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate input resistance
* 100% avalanche tested
* Zener-protected Figure 1. Internal schematic diagram , TAB Applicat
STP12N50M2 Datasheet (306.14 KB)
STP12N50M2
306.14 KB
N-channel power mosfet.
STP12N50M2
N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220 package
Datasheet - preliminary data
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