STP12IE90F4 - Emitter Switched Bipolar Transistor
The STP12IE90F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.
It is designed for use in Gate Driven based topologies.
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STP12IE90F4 Features
* VCS(ON) 1V
* IC 12A RCS(ON) 0.083 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch up to 150 kHz Squared RBSOA up to 900V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO220FP-4L
* Application
