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STP12IE90F4 Datasheet - ST Microelectronics

STP12IE90F4 Emitter Switched Bipolar Transistor

The STP12IE90F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 0 00 000 000 000 000 000 000 .

STP12IE90F4 Features

* VCS(ON) 1V

* IC 12A RCS(ON) 0.083 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch up to 150 kHz Squared RBSOA up to 900V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO220FP-4L

* Application

STP12IE90F4_STMicroelectronics.pdf

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Datasheet Details

Part number:

STP12IE90F4

Manufacturer:

STMicroelectronics ↗

File Size:

297.38 KB

Description:

Emitter switched bipolar transistor.

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STP12IE90F4 STP12IE90F4 Emitter Switched Bipolar Transistor ST Microelectronics

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