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STP12IE95F4

Emitter Switched Bipolar Transistor

STP12IE95F4 Features

* VCS(ON) 1V

* IC 12A RCS(ON) 0.083 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch up to 150 kHz Squared RBSOA up to 950V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO220FP-4L

* Application

STP12IE95F4 General Description

The STP12IE95F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 0 00 000 000 000 000 000 000 .

STP12IE95F4 Datasheet (297.92 KB)

Preview of STP12IE95F4 PDF

Datasheet Details

Part number:

STP12IE95F4

Manufacturer:

STMicroelectronics ↗

File Size:

297.92 KB

Description:

Emitter switched bipolar transistor.

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TAGS

STP12IE95F4 Emitter Switched Bipolar Transistor ST Microelectronics

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