Datasheet Details
- Part number
- IXTP120N04T2
- Manufacturer
- INCHANGE
- File Size
- 246.43 KB
- Datasheet
- IXTP120N04T2-INCHANGE.pdf
- Description
- N-Channel MOSFET
IXTP120N04T2 Description
isc N-Channel MOSFET Transistor IXTP120N04T2 *.
IXTP120N04T2 Features
* Static drain-source on-resistance:
RDS(on) ≤ 6.1mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IXTP120N04T2 Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
40
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
120
IDM
Drain Current-Single Pulsed
360
PD
Total Dissipation @TC=25℃
200
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Te
📁 Related Datasheet
📌 All Tags