TP201 Datasheet | Specifications & PDF Download

3PEAK TP2011/TP2012/TP2014 Ultra-Low Power 200nA, 1.6V, RRIO, Push-Pull Output Comparators Features ◼ Ultra-Low Supply Current: 200 nA per channel

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3PEAK TP2011/TP2012/TP2014 Ultra-Low Power 200nA, 1.6V, RRIO, Push-Pull Output Comparators Features ◼ Ultra-Low Supply Current: 200 nA per channel

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3PEAK TP2011/TP2012/TP2014 Ultra-Low Power 200nA, 1.6V, RRIO, Push-Pull Output Comparators Features ◼ Ultra-Low Supply Current: 200 nA per channel

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www.DataSheet4U.com ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Pac

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2A Bridge Rectifier BR805DTP200 – BR810DTP210 2A Bridge Rectifier Features     Low cost High forward surge current capability Ideal for printed ci

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A Product Line of Diodes Incorporated Green ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features  BVCEO > -140V  IC = -4A

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Green ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features  BVCEO > -60V  IC = -4.3A High Continuous Current  RSAT = 32mΩ fo

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Green ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features  BVCEO > -60V  IC = -5.5A Continuous Collector Current  ICM = -1

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www.DataSheet.co.kr Ordering number : ENA1547 ATP201 SANYO Semiconductors DATA SHEET ATP201 Features • • • • N-Channel Silicon MOSFET General-P

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CYStech Electronics Corp. Spec. No. : C624L3 Issued Date : 2013.04.19 Revised Date : 2017.07.07 Page No. : 1/9 PNP Epitaxial Planar High Current (Hi

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www.DataSheet4U.com ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Pac

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Ordering number : ENA1547A ATP201 N-Channel Power MOSFET 30V, 35A, 17mΩ, Single ATPAK http://onsemi.com Features • Low ON-resistance • Slim package

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www.DataSheet4U.com ZXTP2012A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION Pa

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www.DataSheet4U.com ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Pa

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ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89

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ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 o

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INDUCTORS 1608W-2012W-3308W-3316W-3340W-5022W-UNSHIELDED POWER INDUCTOR-SMT TYPE Suntan® TSD CHTP-W FEAT U R E S ‧Low profile very effective in spa

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CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET Spec. No. : C732J3 Issued Date : 2011.11.10 Revised Date : 2013.12.26 P

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A Product Line of Diodes Incorporated Green ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features  BVCEO > -100V  IC = -5A H

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