TP75 Datasheet | Specifications & PDF Download

3PEAK TP75176E ±15kV ESD Protected, 10Mbps, Full Fail-safe, RS-485 Transceivers Features Description  High Data Rates: 10Mbps At 5V Supply : 6Mb

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MTP75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche a

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STP75NS04Z N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay™ III Power MOSFET General features Type STP75NS04Z VDSS Clamped RDS

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STB75NF75 STP75NF75 - STP75NF75FP N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D2PAK STripFET™ II Power MOSFET General features Type STB75NF7

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N-CHANNEL 75V - 0.009 Ω - 75A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET TYPE STB75NF75L/-1 STP75NF75L s s s s STP75NF75L STB75NF75L STB75NF75L-1

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N05HD/D Designer's ™ HDTMOS E-FET Power Field Effect Transistor N–Channel Enhanc

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STB75NF75 STP75NF75 - STP75NF75FP N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D2PAK STripFET™ II Power MOSFET General features Type STB75NF7

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® STP75NE75 STP75NE75FP N - CHANNEL 75V - 0.01Ω - 75A TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP75NE75 STP75NE75FP s s s s V DSS 75 V 75 V R

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Silan Microelectronics SGTP75V65SDS1P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTP75V65SDS1P7 field stop IGBT adopts Silan Field Stop V

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Silan Microelectronics SGTP75V120FDB2PW4_Datasheet 75A, 1200V FIELD STOP IGBT DESCRIPTION The SGTP75V120FDB2PW4 field stop IGBT adopts Silan Field S

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NTP75N06, NTB75N06, NTBV75N06 Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications

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PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 75N10P IXTP 75N10P IXTQ 75N10P V = 100 V DSS ID25 = 75 A ≤ RDS(on) 25 m

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP75NF75FP ·FEATURES ·Excellent switching performance ·With low gate drive requirements ·Eas

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K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri

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DDR SDRAM (Rev.1.0) Jul. '01 Preliminary M2S56D20/ 30/ 40AKT MITSUBISHI LSIs 256M Double Data Rate Synchronous DRAM PRELIMINARY Some of contents a

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www.DataSheet4U.com N-CHANNEL 75V - 0.0095 Ω - 80A TO-220/TO-220FP/D²PAK STripFET™ II POWER MOSFET TYPE STB75NF75 STP75NF75 STP75NF75FP s s s s STB7

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N06HD/D Designer's HDTMOS E-FET ™ High Density Power FET N–Channel Enhancement–M

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP75NF75 FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·S

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