VTT Datasheet | Specifications & PDF Download

ϮPreliminary Specification ϭFinal Specification Module Model Name 7 Inch Color TFT-LCD G070VTT01.0 G070VTT01.0 Customer Date Approved by Date

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Low Skew, 1-to-16 LVCMOS/LVTTL Clock Generator 87016I DATASHEET Description The 87016I is a low skew, 1:16 LVCMOS/LVTTL Clock Generator. The device

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K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri

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Integrated Circuit Systems, Inc. ICS8312I LOW SKEW, 1-TO-12 LVCMOS / LVTTL FANOUT BUFFER FEATURES • 12 LVCMOS / LVTTL outputs • LVCMOS / LVTTL clock

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FemtoClock® Crystal-to-LVCMOS/LVTTL ICS840022I-02 Clock Generator DATA SHEET General Description The ICS840022I-02 is a Gigabit Ethernet Clock Gener

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GTLP16T1655 16-Bit LVTTL/GTLP Universal Bus Transceiver August 1998 Revised April 2000 GTLP16T1655 16-Bit LVTTL/GTLP Universal Bus Transceiver Gener

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch

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FemtoClock® Crystal-to-LVCMOS/ LVTTL Frequency Synthesizer 840004I-01 Datasheet General Description Features The 840004I-01 is a 4 output LVCMOS/L

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PHONE: (434) 295-3101 FAX: (434) 977-1849 M05VVTT MINIATURE CRYSTAL OVEN SPECIFICATION This specification defines the operating characteristics of a

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K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to

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K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to

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K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to

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K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri

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K4S281632C CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch

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K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c

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.025 NPN Phototransistors IRT Long T-1 (3 mm) Plastic Package VTT3423LA, 4LA, 5LA PACKAGE DIMENSIONS inch (mm) CASE 50A LONG T-1 (3 mm) CHIP TYPE:

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