WS9032K (Winsemi)
Non-isolated step-down LED constant current driver
WS9032K Product Description
no-CAP® VCC 500V， ， ， ±5% LED LED ，
// /T5/T8
WS9032K LED
WS3420 LED
WS9032K LED
(4 views)
WS9002 (Winsemi)
Non-isolated step-down LED constant current controller
WS9002Product Description
， 500V MOSFET ， ±3% LED 93% LED / OVP
T5 T8
LED
WS9002 LED
WS3420 LED
WS9
(4 views)
WFF5N80 (Winsemi)
Silicon N-Channel MOSFET
Features
� 4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 14nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junct
(3 views)
WFF5N65L (Winsemi)
Silicon N-Channel MOSFET
WFF5N65L Product Description
Silicon N-Channel MOSFET
Features
� 4.5A,650V,RDS(on)(Max2.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 14.5nC) � Fast Swi
(3 views)
WFF2N60B (Winsemi)
Power MOSFET
WFF2N60B Product Description
Silicon N-Channel MOSFET
Features
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Swit
(3 views)
WS3110 (Winsemi)
High Performance erformance LED Driver
WS3110
WS3110 High Performance LED Driver
Features
■ Fast start-up time ■ Low operation current (0.6mA) ■ PSR control with Single stage PFC topology
(3 views)
WFW18N50N (Winsemi)
Silicon N-Channel MOSFET
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFW18N50N
Silicon N-Channel MOSFET
Features
■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ U
(3 views)
WFF630 (Winsemi)
Silicon N-Channel MOSFET
WFF630
Silicon N-Channel MOSFET
Features
■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ Fast Switching Capability ■ 10
(3 views)
WS90565 (Winsemi)
Non-isolated buck LED constant current driver
WS9056X Product Description
no-CAP® OVP LED LED
/ /T
WS9056X LED
WS9056X LED ， 85V-265V LED 。
WS9056X
(3 views)
WFF4N60C (Winsemi)
Silicon N-Channel MOSFET
Features
� 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Volt
(2 views)
WFJ5N65B (Winsemi)
Silicon N-Channel MOSFET
Features
� 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical13.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junc
(2 views)
WFN1N60NC (Winsemi)
Silicon N-Channel MOSFET
WFN1N60NC
Silicon N-Channel MOSFET
Features
■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■
(2 views)
WFP13N50C (Winsemi)
Silicon N-Channel MOSFET
WFP13N50C Product Description
Silicon N-Channel MOSFET
Features
� 13A,500V, RDS(on)(Max0.49Ω)@VGS=10V � Ultra-low Gate charge(Typical 37nC) � Fast Sw
(2 views)
WFP5N60B (Winsemi)
Silicon N-Channel MOSFET
Features
� 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junct
(2 views)
WFP50N06 (Winsemi)
Silicon N-Channel MOSFET
Features
■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Tempe
(2 views)
WFP540 (Winsemi)
Silicon N-Channel MOSFET
Features
□ 33A,100V,RDS(on)(Max0.044Ω)@VGS=10V
□ Ultra-low Gate charge(Typical 25nC) □ Fast Switching Capability □ 100%Avalanche Tested □ Isolation Vo
(2 views)
WFP5N80 (Winsemi)
Silicon N-Channel MOSFET
Features
� 4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 14nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junct
(2 views)
WCD8C60S (Winsemi)
Silicon Controlled Rectifiers
WCD8C60S
Sensitive Gate Silicon Controlled Rectifiers
Features
� Sensitive gate trigger current:IGT=200µA maximum � Low On-State Voltage :VTM=1.2(typ.
(2 views)
WCF12C60 (Winsemi)
Silicon Controlled Rectifiers
Features
� Repetitive Peak Off-State Voltage:600V � R.M.S On-State Current (IT(RMS)=12A) � Low On-State Voltage(1.4V(Typ.)@ITM) � Isolation Voltage(VI
(2 views)
WCD8C60 (Winsemi)
Silicon Controlled Rectifiers
Features
� Repetitive Peak Off-State Voltage:600V � R.M.S On-State Current (IT(RMS)=8A) � Low On-State Voltage(1.4(Typ.)@ITM) � Isolation Voltage(VISO
(2 views)
