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Preliminary Data Sheet February 1, 2011 12A Digital Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc –14.4Vdc input; 0.6Vdc to 5.5Vdc output; 12A

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-3 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested

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MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247

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OM1805STM OM1812STM OM1815STM OM1805NTM OM1812NTM OM1815NTM ISOLATED HERMETIC TO-257AA FIXED VOLTAGE REGULATORS APPROVED TO DESC DRAWINGS Three Termi

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance :

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www.DataSheet4U.com MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancem

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·Fast Swi

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www.DataSheet4U.com MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode VDSS 300 V 300 V 300 V ID25 35 A 40 A 40 A RDS(on) 0.

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance :

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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Standard Power MOSFET VDSS IXTH / IXTM 6N90 IXTH / IXTM 6N90A 900 V 900 V ID25 6A 6A RDS(on) 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol VDSS V

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OM1805STM OM1812STM OM1815STM OM1805NTM OM1812NTM OM1815NTM ISOLATED HERMETIC TO-257AA FIXED VOLTAGE REGULATORS APPROVED TO DESC DRAWINGS Three Termi

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MegaMOSTMFET IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode VDSS 500 V 500 V ID25 RDS(on) 21 A 0.25 Ω 24 A 0.23 Ω Symbol VDSS VDG

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www.DataSheet4U.com MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 RDS(on) = 45 mΩ N-Channel Enhancement Mode Symbol VDSS VDGR VGS V

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MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Con

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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OM1805STM OM1812STM OM1815STM OM1805NTM OM1812NTM OM1815NTM ISOLATED HERMETIC TO-257AA FIXED VOLTAGE REGULATORS APPROVED TO DESC DRAWINGS Three Termi

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OM1805STM OM1812STM OM1815STM OM1805NTM OM1812NTM OM1815NTM ISOLATED HERMETIC TO-257AA FIXED VOLTAGE REGULATORS APPROVED TO DESC DRAWINGS Three Termi

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MegaMOSTMFET Obsolete: IXTM20N60 N-Channel Enhancement Mode IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS(on) = 0.35 Ω Symbol Test Conditions

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance :

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