.
Siemens Semiconductor Group
BAR60 - Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz)
Silicon PIN Diodes BAR 60 BAR 61 q q RF switch RF attenuator for frequencies above 10 MHz Type BAR 60 Marking 60 Ordering Code (tape and reel) Q.
Siemens Semiconductor Group
BAR63-06 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63 Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up .
Siemens Semiconductor Group
Q62702-A1039 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63 Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up .
Siemens Semiconductor Group
CLY10 - GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)
GaAs FET CLY 10 _________________________________________________________________________________________________________ Datasheet * Power amplifi.
Siemens Semiconductor Group
CLY2 - GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz)
GaAs FET CLY 2 ________________________________________________________________________________________________________ Datasheet * Power amplifier.
Siemens Semiconductor Group
BAR63-05W - Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63 W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up .
Siemens Semiconductor Group
Q62702-A1025 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63-03W Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up.
Siemens Semiconductor Group
Q62702-A1037 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63 Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up .
Siemens Semiconductor Group
Q62702-A1267 - Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63 W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up .
Siemens Semiconductor Group
Q62702-A1268 - Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63 W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up .
Siemens Semiconductor Group
Q62702-A764 - silicon schottky diode (RF detector/ Low-power mixer/ Zerobias/ Very low capacitance/ for frequencies up to 25 GHz)
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Siemens Semiconductor Group
CLY15 - GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)
GaAs FET CLY 15 ________________________________________________________________________________________________________ Datasheet * Power amplifie.
Siemens Semiconductor Group
CLY5 - GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)
GaAs FET CLY 5 ________________________________________________________________________________________________________ Datasheet * Power amplifier.
Siemens Semiconductor Group
BAR61 - Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz)
Silicon PIN Diodes BAR 60 BAR 61 q q RF switch RF attenuator for frequencies above 10 MHz Type BAR 60 Marking 60 Ordering Code (tape and reel) Q.
Siemens Semiconductor Group
BAR63 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63 Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up .
Siemens Semiconductor Group
BAR63-03 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63-03W Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up.
Siemens Semiconductor Group
BAR63-03W - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63-03W Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up.
Siemens Semiconductor Group
BAR63-04 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63 Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up .
Siemens Semiconductor Group
BAR63-04W - Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63 W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up .
Siemens Semiconductor Group
BAR63-05 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63 Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up .