ice Components Datasheet | Specifications & PDF Download

PREPARED BY: DATE: SW . SPEC. No. ED-96 197XB ISSUE January23, 1998 PAGE 10 Pages /I: : .q&l,Li APPROVED BY: g4fi A, iy$? DATE: ELECTRONIC COMPO

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1D31A Series Class D Inductor Features • Small Footprint • Shielded Design for low EMI • Ferrite Material Designed for Audio Applications Application

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ICE11N70 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching

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ICE11N70FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi

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Hall Device LT140SA LT140SA Hall Voltage 160mV Thin-Type Package GaAs Hall Device s Outline Dimensions (Unit : mm) s Features ¡Small temperature c

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www.DataSheet4U.com FERRITE DEVICES Contents FERRITE DEVICES CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE CIRCULATORS AND ISOLATORS SPE

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GP2Y3A003K0F Optoelectronic Device FEATURES • Trigger point set at factory to 25° • Analog output • Effective Range: 40 to 300 cm • Typical response t

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www.DataSheet4U.com MCC Micro Commercial Components TM Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone: (818) 701-4933 F

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GT04 Series Gate Drive Transformer Features • Meets medical safety isolation requirements • Designed for frequencies from 20 kHz to 300 kHz •

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ICE Components, Inc. Voice: 800.729.2099 Fax: 678.560.9304 cust.serv@icecomp.com www.icecomponents.com Gate Drive Transformer Features • Low Profil

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1D31A Series Class D Inductor Features • Small Footprint • Shielded Design for low EMI • Ferrite Material Designed for Audio Applications Application

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ICE10N60FP N-Channel Enhancement Mode MOSFET ID V(BR)DSS rDS(ON) Qg Product Summary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 600V 0.28Ω 41nC

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ICE10N65FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi

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ICE13N65FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi

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ICE15N60FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi

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ICE73N199 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchin

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‘REPARED BY: DATE SPEC No. No. ED-93032 SHARP ELECTRONIC SHARP COMPONENTS CROUP CORPORATION PILE ISSUE PACE April 12 9, Pages DIVISION 1993

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Hall Device LT135A LT135A s Features ¡Small temperature coefficient of the Hall voltage ¡Good linearity of the Hall voltage ¡Small imbalanced voltag

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PREPARED BY: Ln DATE: lt6/4Y SPEC.No. s#@#ARp ELECTRONIC COMPONENTS GROUP SHARP coRPORATION i ISSUE DG996042 J&16/99 7-t uedl APPROVED BY: DATE:

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