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MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS

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Features  Low On resistance  4.5V/-4.5V drive  RoHS compliant Package Dimensions MSN4688 Absolute Maximum Ratings TA = 25ºC Parameter Drain-to-

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Features  Fast Switching & Low VCE[sat]  High Input Impedance  VCE(sat) = 1.88V @ IC = 40A  High Input Impedance  Short circuit withstand time 10

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5HB06N8 MOS H-BRIDGE- 60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET Summary Device V(BR)DSS N-CH 60V P-CH -60V QG 9.0nC RDS(on) 25m

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MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS

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Features  Low gate charge  Trench FS Technology,  saturation voltage: VCE(sat), typ =1.6V,IC=20A and TC =25°C  RoHS product MSG20T65FQS/T/C Appl

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Features  Low gate charge  Trench FS Technology,  saturation voltage: VCE(sat), typ =1.6V,IC=20A and TC =25°C  RoHS product MSG20T65FQS/T/C Appl

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Features  Low gate charge  Trench FS Technology,  saturation voltage: VCE(sat), typ =1.6V,IC=20A and TC =25°C  RoHS product MSG20T65FQS/T/C Appl

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Features  Low Gate charge  FS Technology  VCE(sat) = 1.7V @ IC = 20A  High Input Impedance  Short circuit withstand time 10 µs MSG20T120FQC N-Ch

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MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS

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MS60N60HGB3/C1 Features  VDS=600V,ID=60A RDS(on)<0.18Ω @ VGS=10V  100% avalanche tested  Minimum Lot-to-Lot variations for robust device  perform

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MS60N60HGB3/C1 Features  VDS=600V,ID=60A RDS(on)<0.18Ω @ VGS=10V  100% avalanche tested  Minimum Lot-to-Lot variations for robust device  perform

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MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS

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MSG40T120FH High speed Trench Fieldstop IGBT General Description This IGBT is produced using advanced trench fieldstop IGBT technology, which provide

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Features  Low gate charge  FS Technology  Saturation voltage:VCE(sat),typ= 1.75V @ IC=25A and TC=25℃  RoHS product Applications  General purpose

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Features  100% avalanche tested  Avalanche ruggedness  Very low intrinsic capacitances  High speed switching  Very low on-resistance MS8N120FC/T

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Features  100% avalanche tested  Avalanche ruggedness  Very low intrinsic capacitances  High speed switching  Very low on-resistance MS8N120FC/T

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MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS

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MSU32F030 ARM® CortexTM-M0 32 MSU32F030 H2.02 Maspower 20181130 1 MSU32F030 ARM® CortexTM-M0 32 1

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Features  Low gate charge  FS Technology  Short circuit withstand time 10 uS  Saturation voltage:VCE(sat),typ=1.8V @IC=15A and TC=25℃ Applications

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