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self-refresh Datasheet, Features, Application

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Cypress
rating-1 8

S27KL0642 - HyperRAM Self-Refresh DRAM

S27KL0642/S27KS0642 3.0 V/1.8 V, 64 Mb (8 MB), HyperRAM Self-Refresh DRAM S27KL0642/S27KS0642, 3.0 V/1.8 V, 64 Mb (8 MB), HyperRAM Self-Refresh DRAM .
Mosel Vitelic Corp
rating-1 5

V53C808H - HIGH PERFORMANCE 1M x 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

MOSEL VITELIC V53C808H HIGH PERFORMANCE 1M x 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH 35 35 ns 18 ns 14 ns 70 ns PRELIMINARY HIGH.
Mosel Vitelic
rating-1 5

V53C16258SH - HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH

MOSEL VITELIC V53C16258SH HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH PRELIMINARY HIGH PERFORMANCE Max. RAS Access Time,.
Mosel Vitelic Corp
rating-1 4

V53C518165A - 1M x 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

MOSEL VITELIC V53C518165A 1M x 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH HIGH PERFORMANCE Max. RAS Access Time, (tRAC) Max. Column Add.
Cypress
rating-1 4

S70KL1281 - Self-Refresh DRAM

Not Recommended for New Designs (NRND) S27KL0641/S27KS0641 S70KL1281/S70KS1281 3.0 V/1.8 V, 64 Mb (8 MB)/128 Mb (16 MB), HyperRAM™ Self-Refresh DRAM .
Mosel Vitelic Corp
rating-1 3

V53C16256SH - 256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM WITH SELF REFRESH

MOSEL VITELIC V53C16256SH 256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM WITH SELF REFRESH PRELIMINARY HIGH PERFORMANCE Max. RAS Access Time, (tRAC) Max.
Mosel Vitelic Corp
rating-1 3

V53C16258H - HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

MOSEL VITELIC V53C16258H HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH 25 25 ns 13 ns 10 ns 45 ns PRELIMINARY HIG.
Mosel Vitelic Corp
rating-1 3

V53C16258L - HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

MOSEL VITELIC V53C16258L HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH 35 35 ns 18 ns 14 ns 70 ns HIGH PE.
Cypress Semiconductor
rating-1 3

S27KL0641 - Self-Refresh DRAM

Not Recommended for New Designs (NRND) S27KL0641/S27KS0641 S70KL1281/S70KS1281 3.0 V/1.8 V, 64 Mb (8 MB)/128 Mb (16 MB), HyperRAM™ Self-Refresh DRAM .
Cypress
rating-1 3

S27KS0642 - HyperRAM Self-Refresh DRAM

S27KL0642/S27KS0642 3.0 V/1.8 V, 64 Mb (8 MB), HyperRAM Self-Refresh DRAM S27KL0642/S27KS0642, 3.0 V/1.8 V, 64 Mb (8 MB), HyperRAM Self-Refresh DRAM .
Siemens Semiconductor Group
rating-1 2

HYB314171BJL-60 - 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh

3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJ-50/-60/-70 HYB 314171BJL-50/-60/-70 Prelimi.
Siemens Semiconductor Group
rating-1 2

HYB314175BJ-50 - 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60 Pre.
Siemens Semiconductor Group
rating-1 2

HYB314175BJ-50- - 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60 Pre.
Siemens Semiconductor Group
rating-1 2

HYB314175BJ-55 - 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60 Pre.
Siemens Semiconductor Group
rating-1 2

HYB314175BJ-60 - 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60 Pre.
Siemens Semiconductor Group
rating-1 2

HYB314175BJL-60 - 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60 Pre.
Cypress Semiconductor
rating-1 2

S27KS0641 - Self-Refresh DRAM

Not Recommended for New Designs (NRND) S27KL0641/S27KS0641 S70KL1281/S70KS1281 3.0 V/1.8 V, 64 Mb (8 MB)/128 Mb (16 MB), HyperRAM™ Self-Refresh DRAM .
Cypress
rating-1 2

S70KS1281 - Self-Refresh DRAM

Not Recommended for New Designs (NRND) S27KL0641/S27KS0641 S70KL1281/S70KS1281 3.0 V/1.8 V, 64 Mb (8 MB)/128 Mb (16 MB), HyperRAM™ Self-Refresh DRAM .
Infineon
rating-1 2

S70KL1283 - 128Mb self-refresh DRAM

S70KL1283, S70KS1283 128 Mb HYPERRAM™ self-refresh DRAM (PSRAM) Octal xSPI, 1.8 V/3.0 V Features • Interface - xSPI (Octal) interface - 1.8 V / 3.0 V .
Infineon
rating-1 2

S70KS1283 - 128Mb self-refresh DRAM

S70KL1283, S70KS1283 128 Mb HYPERRAM™ self-refresh DRAM (PSRAM) Octal xSPI, 1.8 V/3.0 V Features • Interface - xSPI (Octal) interface - 1.8 V / 3.0 V .
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