VDS = 30V ID =52A RDS(ON) < 10mΩ @ VGS=10V （Type：7.2mΩ） Only VDS = -30V ID =-48A RDS(ON) < 13mΩ @ VGS=-10V （Type：8.8mΩ） Use Application BLDC times eng Package Marki.

, should be limited by total power dissipation. . 1 5 ±100 ------------------------43 112 1 ----- Unit V V/℃ mΩ V mV/.

AP50G03GD 30V N+P-Channel Enhancement Mode MOSFET The AP50G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protectio.

+P-Channel

AP50G60SW

AP50G60SW-HF

AP50G60W-HF

AP50GT60SW-HF

AP50-B10

AP50-B420L

AP5002

AP5004

AP501

AP502

AP503

AP504

AP5054