VDS = 20V ID =8.5A RDS(ON) < 22mΩ @ VGS=10V （Type：14mΩ） VDS = -20V ID =-7.8A RDS(ON) < 32mΩ @ VGS=-10V（Type：23mΩ） Application BLDC Package Marking and Ordering Info.

, should be limited by total power dissipation. 2 AP6G02BF REV1.0 AP6G02BF 20V N+P-Channel Enhancement Mode MOSFET .

AP6G02BF 20V N+P-Channel Enhancement Mode MOSFET The AP6G02BF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or .

+P-Channel

AP6G04S

AP6000

AP6001

AP6002

AP6003

AP6004

AP601

AP6015

AP60150R

AP602

AP603

AP6050R

AP6090

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