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AP6G06S Datasheet, MOSFET, APM

AP6G06S Datasheet, MOSFET, APM

AP6G06S

datasheet Download (Size : 1.13MB)

AP6G06S Datasheet
AP6G06S

datasheet Download (Size : 1.13MB)

AP6G06S Datasheet

AP6G06S Features and benefits

AP6G06S Features and benefits

VDS = 60V ID =6.5A RDS(ON) < 55mΩ @ VGS=10V(Type:40mΩ) VDS = -60V ID =-6.2A RDS(ON) < 90mΩ @ VGS=-10V(Type:70mΩ) Application Boost driver Brushless motor Package Marking.

AP6G06S Application

AP6G06S Application

, should be limited by total power dissipation. 2 AP6G06S REV1.0 AP6G06S 60V N+P-Channel Enhancement Mode MOSFET P.

AP6G06S Description

AP6G06S Description

The AP6G06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS.

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TAGS

AP6G06S
60V
N
+P-Channel
Enhancement
Mode
MOSFET
APM

Manufacturer


APM

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