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AP6G02LI Datasheet, MOSFET, APM

AP6G02LI Datasheet, MOSFET, APM

AP6G02LI

datasheet Download (Size : 1.39MB)

AP6G02LI Datasheet
AP6G02LI

datasheet Download (Size : 1.39MB)

AP6G02LI Datasheet

AP6G02LI Features and benefits

AP6G02LI Features and benefits

VDS = 20V ID =7.5A RDS(ON) < 35mΩ @ VGS=4.5V (Type:28mΩ) VDS = -20V ID =-6.8A RDS(ON) < 40mΩ @ VGS=-4.5V(Type:35mΩ) Application BLDC Package Marking and Ordering Informa.

AP6G02LI Application

AP6G02LI Application

, should be limited by total power dissipation. Max. --35 40 1.2 1 5 ±100 ----------------------3.6 1.2 Unit V mΩ mΩ V.

AP6G02LI Description

AP6G02LI Description

The AP6G02LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VD.

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TAGS

AP6G02LI
20V
N
+P-Channel
Enhancement
Mode
MOSFET
APM

Manufacturer


APM

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