VDS = 40V ID =6.3A RDS(ON) < 37mΩ @ VGS=10V （Type：30mΩ）
Only
VDS = -40V ID =-6.1A RDS(ON) < 75mΩ @ VGS=-10V （Type：62mΩ）
Application
Wireless charging Boost driver Brush.
, should be limited by total power dissipation.
37 50 2.5 --1 5 ±100 --4.8 --------------------4.5 14 1.2
Unit V
V/℃ m.
AP6G04S
40V N+P-Channel Enhancement Mode MOSFET
The AP6G04S uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
o.
Image gallery
TAGS
+P-Channel
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