MSC80915 transistor equivalent, npn silicon rf power transistor.
INCLUDE:
* Gold Metalization
* Emitter Ballasting
G L H J F I K M NP
MAXIMUM RATINGS
IC VCC
DISS www.DataSheet4U.com
DIM A B C D
MINIMUM
inches / mm
MAXIMUM
i.
to 2.3 GHz.
PACKAGE STYLE .250 2L FLG
A ØD C E .060 x 45° CHAMFER
B
FEATURES INCLUDE:
* Gold Metalization
* E.
The ASI MSC80915 is Designed for Class A, Common Emitter Applications to 2.3 GHz.
PACKAGE STYLE .250 2L FLG
A ØD C E .060 x 45° CHAMFER
B
FEATURES INCLUDE:
* Gold Metalization
* Emitter Ballasting
G L H J F I K M NP
MAXIMUM RATINGS
IC VC.
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