AFN1912E - N-Channel MOSFET

This page provides the datasheet information for the AFN1912E, a member of the AFN1912E-Alfa N-Channel MOSFET family.

Product Overview

Alfa-MOS

Part number	AFN1912E
Manufacturer	Alfa-MOS
File Size	593.88 KB
Description	N-Channel MOSFET
Datasheet	AFN1912E Datasheet
Additional preview pages of the AFN1912E datasheet.

AFN1912E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=580mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-363 package design.

Other Datasheets by Alfa-MOS

Published: Dec 1, 2018 |