AFN1932E Overview
AFN1932E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-363 ) AFN1932E 30V N-Channel Enhancement Mode MOSFET.
AFN1932E Key Features
- 30V/1.8A,RDS(ON)=450mΩ@VGS=4.5V
- 30V/1.5A,RDS(ON)=600mΩ@VGS=2.5V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protected
- SOT-363 package design
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
- Battery Operated Systems