n-channel mosfet.
* 30V/1.8A,RDS(ON)=450mΩ@VGS=4.5V
* 30V/1.5A,RDS(ON)=600mΩ@VGS=2.5V
* Low Offset (Error) Voltage
* Low-Voltage Operation
* High-Speed Circuits
* L.
Pin Description ( SOT-363 )
AFN1932E
30V N-Channel Enhancement Mode MOSFET
Features
* 30V/1.8A,RDS(ON)=450mΩ@VGS=4.
AFN1932E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-.
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