AFN1932E Datasheet - Alfa-MOS

N-Channel MOSFET

AFN1932E Features

* 30V/1.8A,RDS(ON)=450mΩ@VGS=4.5V

* 30V/1.5A,RDS(ON)=600mΩ@VGS=2.5V

* Low Offset (Error) Voltage

* Low-Voltage Operation

* High-Speed Circuits

* Low Battery Voltage Operation

* ESD Protected

* SOT-363 package design Application

* Drivers: Relays, Solenoids, Lamps

AFN1932E General Description

AFN1932E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria.

AFN1932E Datasheet (353.00 KB)

AFN1932E Datasheet Preview — Preview of AFN1932E PDF

Datasheet Details

Part number:

AFN1932E

Manufacturer:

Alfa-MOS

File Size:

353.00 KB

Description:

N-channel mosfet.

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AFN1932E N-Channel MOSFET Alfa-MOS

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AFN1932E Features

AFN1932E General Description

Datasheet Details

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Description:

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