AFN7308S Alfa-MOS

• ID=8A,RDS(ON)=45mΩ@VGS=10V
• ID=6A,RDS(ON)=50mΩ@VGS=4.5V
• Super high density cell design for extremely low RDS (ON)
• Exceptional on-resistance and max.

Pin Description ( DFN3.3X3.3-8L ) AFN7308S 60V N-Channel Enhancement Mode MOSFET Features
• ID=8A,RDS(ON)=45mΩ@VGS.