AFP7611 Overview
AFP7611, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-363 ) AFP7611 20V P-Channel Enhancement...
AFP7611 Key Features
- 20V/-3.0A,RDS(ON)=110mΩ@VGS=-4.5V
- 20V/-2.4A,RDS(ON)=135mΩ@VGS=-2.5V
- 20V/-2.0A,RDS(ON)=180mΩ@VGS=-1.8V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-363 package design
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- Net Working System