Datasheet Details
| Part number | AO4403 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.37 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4403_ETC.pdf |
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Overview: AO4403 30V P-Channel MOSFET General.
| Part number | AO4403 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.37 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4403_ETC.pdf |
|
|
|
Product Summary The AO4403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) 100% UIS Tested 100% Rg Tested -30V -6A < 48mW < 57mW < 80mW SOIC-8 Top View Bottom View D D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C TA=70°C ID -6 -5 Pulsed Drain Current C IDM -30 Avalanche Current C IAS, IAR 18 Avalanche energy L=0.1mH C EAS, EAR 16 TA=25°C Power Dissipation B TA=70°C PD 3.1 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 7.1: March 2024 www.aosmd.com Page 1 of 5 AO4403 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250mA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±12V VDS=VGS ID=-250mA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-2A Forward Transconductance VDS=-5V, ID=-6A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -30 TJ=55°C -0.5 -30 TJ=125°C V -1 mA -5 ±100 nA -0.9 -1.3 V A 40 48 mW 60 72 45 57 mW 60 80 mW 19 S -0.7 -1 V -3.5 A DYNAMIC PARAM
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4403 | P-Channel MOSFET | Kexin |
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AO4403 | P-Channel MOSFET | Freescale |
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AO4403-HF | P-Channel MOSFET | Kexin |
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