Datasheet Details
| Part number | AO4405 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 374.98 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4405-AlphaOmegaSemiconductors.pdf |
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Overview: AO4405 30V P-Channel MOSFET General.
| Part number | AO4405 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 374.98 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4405-AlphaOmegaSemiconductors.pdf |
|
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Product Summary The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -6A < 50mΩ < 85mΩ Top View D D D D SOIC-8 Bottom View G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR VDS Spike 10µs VSPIKE TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G Maximum -30 ±20 -6 -5.1 -30 17 14 -36 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 D S Units V V A A mJ V W °C Units °C/W °C/W °C/W Rev.10.0: March 2014 www.aosmd.com Page 1 of 6 AO4405 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS= ±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A Forward Transconductance VDS=-5V, ID=-6A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C -30 -1.4 -30 V -1 µA -5 ±100 nA -1.9 -2.4 V A 33 50 mΩ 50 70 53 85 mΩ 14 S -0.8 -1 V -3.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resis
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4405 | P-Channel MOSFET | Kexin |
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AO4405 | P-Channel MOSFET | Freescale |
| Part Number | Description |
|---|---|
| AO4400 | N-Channel MOSFET |
| AO4401 | P-Channel MOSFET |
| AO4402 | 20V N-Channel MOSFET |
| AO4402G | 20V N-Channel MOSFET |
| AO4403 | 30V P-Channel MOSFET |
| AO4404 | N-Channel MOSFET |
| AO4404B | 30V N-Channel MOSFET |
| AO4406 | N-Channel MOSFET |
| AO4406A | N-Channel MOSFET |
| AO4406AL | N-Channel MOSFET |