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AO4438 - 60V N-Channel MOSFET

Description

The AO4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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AO4438 60V N-Channel MOSFET General Description The AO4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = 60V ID = 8.2A (VGS = 10V) RDS(ON) < 22mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 8.2 6.6 40 3.
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