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AO4459 - 30V P-Channel MOSFET

General Description

The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

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AO4459 30V P-Channel MOSFET General Description Product Summary The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely l...

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MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -6.5A < 46mW < 72mW SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25°C TA=70°C ID -6.5 -5.3 Pulsed Drain Current C IDM -30 Avalanche Current C IAS, IAR 17 Avalanche energy L=0.

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