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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4610 Datasheet Preview

AO4610 Datasheet

Complementary Enhancement Mode Field Effect Transistor

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AO4610 pdf
AO4610
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4610 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications. A Schottky
diode is co-packaged with the n-channel FET
to minimize body diode losses.Standard
Product AO4610 is Pb-free (meets ROHS &
Sony 259 specifications). AO4610L is a
Green Product ordering option. AO4610
and AO4610L are electrically identical.
Features
n-channel
VDS (V) = 30V
ID = 8.5A(VGS=10V)
RDS(ON)
< 18m(VGS=10V)
< 28m(VGS=4.5V)
VF<0.5V@1A
p-channel
-30V
-7.1A(VGS = -10V)
RDS(ON)
< 25m(VGS = -10V)
< 40m(VGS = -4.5V)
D2 D1
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S2/A 1 8 D2/K
G2 2 7 D2/K
S1 3 6 D1
G1 4 5 D1
SOIC-8
K
G2 A
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain CurrentB
ID
IDM
8.5
6.6
30
Power Dissipation
TA=25°C
TA=70°C
PD
2
1.28
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-7.1
-5.6
-30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Forward CurrentB
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
ID
IDM
PD
TJ, TSTG
Maximum Schottky
30
3
2
20
2
1.28
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4610 Datasheet Preview

AO4610 Datasheet

Complementary Enhancement Mode Field Effect Transistor

No Preview Available !

AO4610 pdf
AO4610
Thermal Characteristics: n-channel, Schottky and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
Symbol
RθJA
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t 10s
Steady-State
RθJL
RθJA
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t 10s
Steady-State
RθJL
RθJA
Maximum Junction-to-Lead C
Steady-State
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Schottky
Schottky
Schottky
Typ
48
74
35
48
74
35
47.5
71
32
Max
62.5
110
60
62.5
110
40
62.5
110
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.


Part Number AO4610
Description Complementary Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
Total Page 9 Pages
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