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AO4622 Datasheet 20V Dual MOSFET

Manufacturer: Alpha & Omega Semiconductors

General Description

The AO4622 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Product Summary N-Channel P-Channel VDS (V) = 20V -20V ID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V) RDS(ON) RDS(ON) < 23mΩ (VGS=10V) < 53mΩ (VGS = -4.5V) < 30mΩ (VGS=4.5V) < 87mΩ (VGS = -2.5V) < 84mΩ (VGS=2.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Pin1 Top View S1 D1 G1 D1 S2 D2 G2 D2 D1 G1 G2 S1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±16 Continuous Drain TA=25°C 7.3 Current AF TA=70°C ID 6.2 Pulsed Drain Current B IDM 35 Power Dissipation TA=25°C TA=70°C PD Avalanche Current B IAR Repetitive avalanche energy 0.3mH B EAR 2 1.44 13 25 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Max p-channel -20 ±12 -5 -4.2 -25 2 1.44 13 25 -55 to 150 D2 S2 p-channel Units V V A W A mJ °C Thermal Characteristics: n-channel and p-channel Parameter Symbol Device Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RθJA n-ch n-ch 48 74 Maximum Junction-to-Lead C Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Steady-State t ≤ 10s Steady-State RθJL n-ch 35 RθJA p-ch p-ch 48 74 Maximum Junction-to-Lead C Steady-State RθJL p-ch 35 Max Units 62.5 °C/W 110 °C/W 40 °C/W 62.5 °C/W 110 °C/W 40 °C/W Alpha & Omega Semiconductor, Ltd.

Overview

AO4622 20V Dual P + N-Channel MOSFET General.