Datasheet Details
| Part number | AO4630 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 505.18 KB |
| Description | MOSFET |
| Datasheet |
 AO4630 Datasheet
|
|
|
| Part number | AO4630 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 505.18 KB |
| Description | MOSFET |
| Datasheet |
AO4630 Datasheet
|
|
|
|
AO4630 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
Product Summary N-Channel VDS= 30V ID= 7A (VGS=10V) RDS(ON) < 23mΩ (VGS=10V) < 28mΩ (VGS=4.5V) < 36mΩ (VGS=2.5V) 100% UIS Tested 100% Rg Tested P-Channel -30V -5A (VGS=-10V) RDS(ON) < 48mΩ (VGS=-10V) < 57mΩ (VGS=-4.5V) < 78mΩ (VGS=-2.5V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Pin1 Orderable Part Number AO4630 D1 D2 Top View S1 1 G1 2 S2 3 G2 4 8 7 6 5 Package Type SO-8 D1 D1 D2 G1 D2 G2 S1 S2 N-channel P-channel Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max N-channel Max P-channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±12 ±12 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS EAS 7 5.6 30 14 10 -5 -4 -25 18 16 VDS Spike 10µs VSPIKE 36 -36 TA=25°C Power Dissipation B TA=70°C PD 2 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A mJ V W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Rev.1.0: Nov 2015 www.aosmd.com Page 1 of 9 AO4630 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±12V VDS=VGS, ID=250µA VGS=10V, ID=7A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A VGS=2.5V, ID=5A Forward Transconductance
AO4630 30V Complementary MOSFET General.
| Part Number | Description |
|---|---|
| AO4600 | MOSFET |
| AO4601 | MOSFET |
| AO4603 | MOSFET |
| AO4604 | MOSFET |
| AO4606 | 30V Complementary MOSFET |
| AO4607 | MOSFET |
| AO4609 | MOSFET |
| AO4610 | MOSFET |
| AO4611 | MOSFET |
| AO4612 | MOSFET |