Datasheet Details
| Part number | AO4807 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 256.76 KB |
| Description | 30V Dual P-Channel MOSFET |
| Download | AO4807 Download (PDF) |
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| Part number | AO4807 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 256.76 KB |
| Description | 30V Dual P-Channel MOSFET |
| Download | AO4807 Download (PDF) |
|
|
|
Product Summary The AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -6A < 35mW < 58mW Top View SOIC-8 Bottom Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -6 -5 -30 23 26 2 1.3 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 6.1: August 2023 www.aosmd.com Page 1 of 6 AO4807 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C -1 mA -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -1.3 -1.85 -2.4 V ID(ON) On state drain current VGS=-10V, VDS=-5V -30 A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-6A TJ=125°C 21 35 mW 31.5 45 VGS=-4.5V, ID=-5A 33 58 mW gFS Forward Transconductance VDS=-5V, ID=-6A 19 S VSD Diode Forward Voltage IS=-1A,VGS=0V -0.8 -1 V IS Maximum Body-Diode Continuous Current -3.5 A DYNAMIC PARAMETERS Ciss Input Capacitance C
AO4807 30V Dual P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| EVVOSEMI | AO4807 | Dual P-Channel MOSFET | EVVOSEMI |
| UMW | AO4807 | -30V P-ChanneI MOSFET | UMW |
 |
AO4807 | Dual P-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |
| AO4801 | Dual P-Channel MOSFET |
| AO4801A | 30V P-Channel MOSFET |
| AO4802 | Dual N-Channel MOSFET |
| AO4802L | Dual N-Channel MOSFET |
| AO4803 | Dual P-Channel MOSFET |
| AO4803A | 30V Dual P-Channel MOSFET |
| AO4805 | 30V Dual P-Channel MOSFET |