Datasheet Details
| Part number | AO4813 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 319.63 KB |
| Description | 30V Dual P-Channel MOSFET |
| Download | AO4813 Download (PDF) |
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Overview: AO4813 30V Dual P-Channel MOSFET General.
| Part number | AO4813 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 319.63 KB |
| Description | 30V Dual P-Channel MOSFET |
| Download | AO4813 Download (PDF) |
|
|
|
Product Summary The AO4813 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -7.1A < 25mW < 40mW SOIC-8 Top View Bottom View D Pin1 Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -7.1 -5.6 -40 -27 36 2 1.3 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 9.1: March 2024 www.aosmd.com Page 1 of 6 AO4813 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C -1 mA -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -1.5 -2.0 -2.5 V ID(ON) On state drain current VGS=-10V, VDS=-5V -40 A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-7.1A TJ=125°C 17 25 mW 24 33 VGS=-4.5V, ID=-5.6A 27 40 mW gFS Forward Transconductance VDS=-5V, ID=-7.1A 24 S VSD Diode Forward Voltage IS=-1A,VGS=0V -0.75 -1 V IS Maximum Body-Diode Continuous Current -2.5 A DYNAMIC PARAMETERS
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4813 | Dual P-Channel MOSFET | Kexin |
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AO4813 | Dual P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
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| AO4812A | Dual N-Channel MOSFET |
| AO4815 | Dual P-Channel MOSFET |
| AO4816 | Dual N-Channel MOSFET |
| AO4817 | Dual P-Channel MOSFET |
| AO4818 | 30V Dual N-channel MOSFET |
| AO4818B | 30V Dual N-channel MOSFET |
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |