Datasheet Details
| Part number | AO4854 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 200.95 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
 AO4854 Datasheet
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| Part number | AO4854 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 200.95 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
AO4854 Datasheet
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Product Summary The AO4854 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 4V) ESD Protected 100% UIS Tested 100% Rg Tested 30V 8A <19mΩ < 23mΩ < 26mΩ Top View SOIC-8 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 D1 D1 G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 8 6.5 48 19 18 2 1.3 -55 to 150 D G S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 32 Max 62.5 90 40 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev3 : Nov 2010 www.aosmd.com Page 1 of 6 AO4854 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 10 µA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.4 V ID(ON) On state drain current VGS=10V, VDS=5V 30 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A VGS=4.5V, ID=4A TJ=125°C 15.5 19 21 25 18.5 23 mΩ mΩ VGS=4V, ID=4A 20.5 26 mΩ gFS Forward Transconductance VDS=5V, ID=8A 30 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V IS Maximum Body-Diode Continuous Current 2.5
AO4854 30V Dual N-channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4854 | Dual N-Channel MOSFET | Kexin |
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AO4854L | Dual N-Channel MOSFET | FreesCale |
| Part Number | Description |
|---|---|
| AO4850 | Dual N-Channel MOSFET |
| AO4852 | 60V Dual N-Channel MOSFET |
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |
| AO4801 | Dual P-Channel MOSFET |
| AO4801A | 30V P-Channel MOSFET |
| AO4802 | Dual N-Channel MOSFET |
| AO4802L | Dual N-Channel MOSFET |
| AO4803 | Dual P-Channel MOSFET |